Preparation of orthorhombic Y-doped TaON film

Y-doped TaON films were grown on (001)YSZ and (012)Al2O3 substrates by radio frequency (RF) magnetron reactive sputtering deposition from Ta metal target Y chips under the mixture gases of N2, O2 Ar gases. Films with various content prepared changing area ratio Y/(Y + Ta) target. The pure monoclinic phase was obtained for both controlling partial pressure N2 gasses. Crystal structure changed to orthorhombic one lattice parameters a = 0.518 nm, b 0.488 c 0.504 nm increase in films. Our results reveal that could be used as novel mother fluorite-like prepare phase.